Process for manufacture of integrated circuit device

Details Process for manufacture of integrated circuit device Process for manufacture of integrated circuit device

1997-11-06

2001-01-23

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S624000, C438S633000, C438S697000, C438S701000

Reexamination Certificate

active

06177360

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to an improved dielectric composition for use in the manufacture of integrated circuit devices and to the process for the manufacture of dielectric layers in integrated circuit devices.
BACKGROUND OF THE INVENTION
There is a continuing desire in the microelectronics industry to increase the circuit density in multilevel integrated circuit devices, e.g., memory and logic chips, thereby increasing their performance and reducing their cost. In order to accomplish this goal, there is a desire to reduce the minimum feature size on the chip, e.g., circuit linewidth, and also to improve the properties of the interposed layer of dielectric material to lower the dielectric constant and avoid cracking of the dielectric layers during manufacturing of the integrated circuit device.
One prior art dielectric material used in integrated circuit devices is a slurried particulate glass which is coated as a film on a substrate and sintered to form the dielectric layer. Unfortunately, sintering requires very high temperatures which are unsuitable in some applications. A solution of methyl silsesquioxane is sold by Allied Signal Corp. under the trademark AS-418 for use as a dielectric material in microelectronics. A solution of silsesquioxane is also sold by Dow Corning Corp. under the Trademark FO
x
for use in microelectronics. However, films of silsesquioxane, especially thicker films of silsesquioxane, have a tendency to crack during manufacturing. There is a continuing need in the art for a low dielectric composition which can be readily formed into film and processed without cracking.
It is therefore an object of the present invention to provide an improved dielectric composition and process for forming the dielectric layers in integrated circuit devices.
Other objects and advantages will be apparent from the following disclosure.
SUMMARY OF THE INVENTION
The present invention relates to a dielectric composition and a process for making an integrated circuit device. The dielectric composition for use in the process of the present invention comprises silsesquioxane preferably methyl silsesquioxane and a photosensitive or thermally sensitive base generator. The integrated circuit device comprises (i) a substrate, (ii) interconnecting metallic circuit lines positioned on the substrate, and (iii) a dielectric material positioned contiguous to the circuit lines (over and/or between the circuit lines). The dielectric material in the integrated circuit device is condensed silsesquioxane network. The process for forming the integrated circuit device involves thermal condensation of a film of dielectric composition of the present invention i.e., low molecular weight silsesquioxane precursor and a photosensitive or thermally sensitive base generator. During the condensation reaction, a base is generated (activated) by light or heat. The generated base catalyzes the condensation reaction thereby enabling extensive condensation of the silsesquioxane network at a lower temperature. The base is not generated until it is desired to condense the silsesquioxane precursor thereby enhancing the shelf life of the composition.
A more thorough disclosure of the present invention is presented in the detailed description which follows and from the accompanying drawing.


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D. Loy et al., “Bridged Polysilsesquioxanes. High Porous Organic-Inorganic Materials”, Chem. Rev. 19955, 95, 1431-1442.
R. Baney et al., “Silsesquioxanes”, Chem. Rev. 1995, 1409-1430.

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