Process for manufacture of integrated circuit device

Details Process for manufacture of integrated circuit device Process for manufacture of integrated circuit device

1997-11-06

1999-09-14

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438780, 438781, H01L 2128

Patent

active

059536276

ABSTRACT:
The invention relates to a process for making an integrated circuit device comprising (I) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the condensation product of silsesquioxane precursor in the presence of an organic amine having a boiling point greater than 150.degree. C.

REFERENCES:
patent: 4626556 (1986-12-01), Nozue et al.
patent: 5767014 (1998-06-01), Hawker et al.
D. Loy et al., "Bridged Polysilsesquioxanes. High Porous Organic-Inorganic Materials", Chem. Rev. 19955, 95, 1431-1442.
R. Baney et al., "Silsesquioxanes", Chem. Rev. 1995, 1409-1430.

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