Process for manufacture of integrated circuit device

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430327, G03F 726

Patent

active

061106496

ABSTRACT:
The invention relates to a dielectric material and a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises condensed organic polysilica and porous particles.

REFERENCES:
patent: 3732181 (1973-05-01), Ray et al.
patent: 4141877 (1979-02-01), Luttinger et al.
patent: 4702792 (1987-10-01), Chow et al.
patent: 5043369 (1991-08-01), Bahn et al.
patent: 5122439 (1992-06-01), Miersch et al.
patent: 5173392 (1992-12-01), Miersch et al.
patent: 5252654 (1993-10-01), David et al.
patent: 5266446 (1993-11-01), Chang et al.
patent: 5275878 (1994-01-01), Yamakawa et al.
patent: 5412160 (1995-05-01), Yasumoto et al.
patent: 5767014 (1998-06-01), Hawker et al.
patent: 5773197 (1998-06-01), Carter et al.
patent: 5883219 (1999-03-01), Carter et al.
R. Japp et al., "Low Dielectric Constant Laminates Containing Microspheres", Mat. Res. Soc. Symp. Proc. vol. 372, pp. 221-245, 1995 Materials Research Society.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for manufacture of integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for manufacture of integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for manufacture of integrated circuit device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1248144

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.