Process for making strain-compensated bonded silicon-on-insulato

Details Process for making strain-compensated bonded silicon-on-insulato Process for making strain-compensated bonded silicon-on-insulato

1991-05-08

1993-11-16

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156633, 156657, 156662, 437 26, 437 62, 437 86, 437132, 437974, 252 791, 252 793, H01L 2100

Patent

active

052619990

ABSTRACT:
A silicon-on-insulator material is formed by a method which includes the steps of forming a p-type silicon epitaxial layer, doped with boron and a higher concentration of germanium, on the surface of a semiconductor silicon substrate, forming an additional silicon epitaxial layer on the p-type silicon epitaxial layer, forming an oxide layer on the additional silicon epitaxial layer, forming an oxide layer on another semiconductor silicon substrate, forming a laminate by bringing into contact, at room temperature, the oxide layers thereby bonding together the substrates, etching the silicon substrate provided with the silicon epitaxial layers, with an isotropic etch to remove most of this silicon substrate, exposing the laminate to an anisotropic etch for this silicon substrate until the remainder of this silicon substrate is removed but only a part of the p-type epitaxial layer is removed and then exposing the resultant structure to an additional isotropic etch for the p-type epitaxial layer for a time sufficient only to remove only the remainder of the p-type epitaxial layer.

REFERENCES:
patent: 5013681 (1991-05-01), Godbey et al.

Affiliated with

Also associated with

Rating

Process for making strain-compensated bonded silicon-on-insulato does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for making strain-compensated bonded silicon-on-insulato, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for making strain-compensated bonded silicon-on-insulato will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-19734