Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-03-27
1998-05-26
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
216 52, 216 89, H01L 4122
Patent
active
057563993
ABSTRACT:
The present invention provides a process for making a semiconductor wafer, including slicing an ingot to obtain wafers; surface-grinding both sides of each of the wafers; etching the wafers with an alkaline solution; chamfering the peripheral portion of each of the wafers; both-side polishing the wafers for mirror processing ; cleaning both sides of each of the wafers to remove the particles attached to the sides; and drying and cleaning the wafers. By employing the present process, the time for polishing the wafer can be shortened, and the semiconductor wafer can be made effectively.
REFERENCES:
patent: 4588473 (1986-05-01), Hisatomi et al.
patent: 5591502 (1997-01-01), Kaneko et al.
Hajime Hirofumi
Yubitani Toshiharu
Breneman R. Bruce
Goudreau George
Komatsu Electronic Metals Co. Ltd.
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