Process for making multi-crystalline silicon thin-film solar...

Details Process for making multi-crystalline silicon thin-film solar... Process for making multi-crystalline silicon thin-film solar...

2011-01-04

2011-01-04

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C136S244000, C136S261000, C257S431000, C257SE21361, C438S057000

Reexamination Certificate

active

07863080

ABSTRACT:
Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a p+type back surface field film. The temperature is raised to grow a p−type light-soaking film on the p+type back surface field film. Phosphine is deposited on the p−type light-soaking film to form an n+type emitter. Thus, an n+-p−-p+laminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n+-p−-p+laminate, thus forming an anti-reflection film of SiCN/SiO2 on the n+type emitter. The n+-p−-p+laminate is etched in a patterned mask process. A p−type ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The n+type emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An n−type ohmic contact is formed on the n+type emitter.

REFERENCES:
patent: 3961997 (1976-06-01), Chu

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