Process for making monocrystalline HGCDTE layers

Details Process for making monocrystalline HGCDTE layers Process for making monocrystalline HGCDTE layers

1988-06-15

1989-10-10

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156601, 156622, 156624, 156DIG72, 156DIG52, 156DIG90, 148DIG101, C30B 1904, C30B 1906, C30B 1910

Patent

active

048729434

ABSTRACT:
A process for making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communication zones, kept at different and controlled temperatures. The growth solution is directly prepared inside the reactor by subjecting weighed cadmium and tellurium quantities and a mercury bath to a specific thermal cycle so that the mercury concentration in the solution is established by absorption from the vapor phase and is controlled by the lower temperature level.

REFERENCES:
patent: 3725135 (1973-04-01), Hager et al.
patent: 3902924 (1975-09-01), Macidek et al.
patent: 4315477 (1982-02-01), Wang et al.
patent: 4317689 (1982-03-01), Bowers et al.
patent: 4344476 (1982-08-01), Sutcliffe et al.
patent: 4642142 (1987-02-01), Harman
Willardson et al., "Semiconductors and Semimetals", vol. 18, Mercury Cadmium Telluride, Academic Press, New York, 1981, pp. 88 to 91.

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