Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1995-05-04
1997-08-05
Niebling, John
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438528, H01L 21265
Patent
active
056542100
ABSTRACT:
Formation of a barrier region in a single crystal group IV semiconductor substrate at a predetermined spacing from a doped region in the substrate is described to prevent or inhibit migration of dopant materials from an adjacent doped region through the barrier region. By implantation of group IV materials into a semiconductor substrate to a predetermined depth in excess of the depth of a doped region, a barrier region can be created in the semiconductor to prevent migration of the dopants from the doped region through the barrier region. The treatment of the single crystal substrate with the group IV material is carried out at a dosage and energy level sufficient to provide such a barrier region in the semiconductor substrate, but insufficient to result in amorphization (destruction) of the single crystal lattice of the semiconductor substrate. In another embodiment, a similar barrier region may be formed in the semiconductor substrate but at a depth less than that of the doped region to inhibit migration of the dopant to the surface of the substrate. Such barrier regions may be formed in the substrate both above and below the doped region to inhibit migration of the dopant in the doped region in either direction.
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Aronowitz Sheldon
Kimball James
LSI Logic Corporation
Mulpuri S.
Niebling John
Taylor John P.
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