Process for making doped semiconductors

Details Process for making doped semiconductors Process for making doped semiconductors

1982-03-18

1984-02-14

Garris, Bradley

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 156DIG73, 156DIG89, 427 85, 427 86, C30B 2306, C30B 2700, C30B 3108, C30B 3112

Patent

active

044314752

ABSTRACT:
A process for making doped semiconductor bodies in thick sheets by epitaxial growth of a doped monocrystalline semiconductor layer on a substrate body by means of a transfer reaction, the transfer system being so arranged that dead spaces are avoided and that within the transfer system a gradient of maximally 1.degree. C./mm is maintained. The invention makes it possible to obtain doped layers of larger thickness than heretofore known.

REFERENCES:
patent: 3484302 (1969-12-01), Maeda et al.
patent: 3663722 (1972-05-01), Kamath
patent: 4279669 (1981-07-01), Braun et al.

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