Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2008-03-04
2010-10-26
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S082000, C257S432000, C257S619000, C257S774000, C257SE21577, C438S459000
Reexamination Certificate
active
07821106
ABSTRACT:
A process for producing electrical contact connections for a component integrated in a substrate material is provided, the substrate material having a first surface region, and at least one terminal contact being arranged at least partially in the first surface region for each component, which is distinguished in particular by application of a covering to the first surface region and production of at least one contact passage which, in the substrate material, runs transversely with respect to the first surface region, in which process, in order to form at least one contact location in a second surface region which is to be provided, at least one electrical contact connection from the contact location to at least one of the terminal contacts is produced via the respective contact passages.
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Bieck Florian
Leib Jürgen
Louie Wai-Sing
Ohlandt Greeley Ruggiero & Perle LLP
Schott AG
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