Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1998-11-23
2000-08-29
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427576, 427577, 427579, 42725523, 42725528, 42725534, 42725536, 427255393, 427255394, H05H 124, C23C 1600
Patent
active
061105430
ABSTRACT:
The present invention is directed to a process for forming compound films that contain at least three elements. The films are formed on a substrate by directing a gas containing reactant species onto the substrate. The compound film is formed from an interaction between two reactant species. The third element is incorporated into the film as it formed. The third element is different from the other two elements that form the compound film and is hydrogen, deuterium, or oxygen. The presence of the third element enhances the properties of the compound film. At least a portion of the substrate remains within the purview of the plasma discharge while the compound film is formed on the substrate.
REFERENCES:
patent: 5356672 (1994-10-01), Schmitt, III et al.
patent: 5508067 (1996-04-01), Sato et al.
patent: 5525379 (1996-06-01), Takada et al.
patent: 5593741 (1997-01-01), Ikeda
Lucovsky, G., et al., "Defect Reduction in Remote Plasma Deposited Silicon Nitride By Post-Deposition Rapid Thermal Annealing," Mat. Res. Symp. Proc., vol. 525, pp. 187-192 (1988).
DeSantolo Anthony Michael
Krisch Kathleen S
Mandich Mary Louise
Opila, Jr. Robert Leon
Weldon Marcus
Botos Richard J.
King Roy V.
Lucent Technologies - Inc.
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