Process for making an integrated circuit with high dielectric co

Details Process for making an integrated circuit with high dielectric co Process for making an integrated circuit with high dielectric co

1996-12-16

1999-03-30

Kunemund, Robert

Coating processes

Electrical product produced

Metallic compound coating

4273762, 427421, 438785, B05D 912

Patent

active

058885854

ABSTRACT:
A charge storage device, such as an integrated circuit memory, including a dielectric comprising a barium-strontium-niobium oxide. A liquid precursor including the metals barium, strontium, and niobium is prepared and applied to a platinum electrode. The precursor is baked and annealed to form a dielectric having the formula Ba.sub.x Sr.sub.y Nb.sub.z O.sub.30, where x=1.3 to 3.5, y=1.5 to 3.7, and z =10. A top platinum electrode is then formed to provide a memory cell capacitor. Optimum results to date have been obtained with Ba.sub.2 Sr.sub.3 Nb.sub.10 O.sub.30, which yields a memory cell dielectric with dielectric constant over 1000 and a leakage current of less than 10.sup.-5 amperes per square centimeter for voltages up to 5 volts.

REFERENCES:
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patent: 5342648 (1994-08-01), MacKenzie et al.
patent: 5471363 (1995-11-01), Mihara
C. Chen et al., "Ferroelectric and pyroelectric properties of strontium barium niobate films prepared by the sol-gel method" J.Appl. Phys. 69 (3) 1 Feb. 1991, pp. 1763-1765.
C. Luk et al., "Characterization of strontium barium niobate films prepared by sol-gel process using 2-methoxyethanol", Thin Solid Films 298 (1997) pp. 57-61.

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