Metal working – Method of mechanical manufacture – Electrical device making
Patent
1990-04-10
1991-08-27
Hall, Carl E.
Metal working
Method of mechanical manufacture
Electrical device making
360119, 360122, G11B 542
Patent
active
050421409
ABSTRACT:
A process of manufacturing an apparatus incorporating a layered thin film structure, wherein said process more particularly obviates the need to repeat on a first part of the apparatus the effects of certain operations required to produce the second part formed by the layered thin film structure. For this purpose, the process consists of utilizing a substrate to produce an intermediate assembly (12) comprising the thin film structure (11), then attaching the intermediate assembly (12) to the first part (10), then at least partially eliminating the intermediate substrate (13).
REFERENCES:
patent: 3499214 (1970-03-01), Schneider
patent: 4670972 (1987-06-01), Sakakima
patent: 4821403 (1989-04-01), Rolland et al.
patent: 4849842 (1989-07-01), Meunier et al.
patent: 4897747 (1990-01-01), Meunier et al.
T. Hamaguchi et al., "Novel LSI/SOI Wafer Fabrication Using Device Layer Transfer Technique", IEDM 85, Technical Digest, 1985, IEEE New York, pp. 688-691.
Patent Abstracts of Japan, vol. 9, No. 239, Sep. 25, 1985, & JP-A-60 093610.
Patent Abstracts of Japan, vol. 6, No. 30 (P-102) (908) Feb. 23, 1982 and JP-A-56 148713.
Coutellier Jean-Marc
Jacombelli Alain
Maurice Francois
Meunier Paul L.
Compagnie Europeenne de Composants Electroniques - LCC
Hall Carl E.
LandOfFree
Process for making an apparatus utilizing a layered thin film st does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for making an apparatus utilizing a layered thin film st, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for making an apparatus utilizing a layered thin film st will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1405218