Bipolar transistor construction method

Details Bipolar transistor construction method Bipolar transistor construction method

1974-12-06

1976-09-21

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

148187, 357 91, 29577, B01J 1700

Patent

active

039810720

ABSTRACT:
A thick layer of silicon dioxide is grown on a semiconductive substrate and then etched to form an elongated opening that defines the outer boundaries of a diffused transistor. The thick silicon dioxide layer serves as a permanent fixed, diffusion mask. The first diffusion is performed through the permanent mask opening. Thereafter, portions of the elongated opening are masked by secondary thin layers of silicon dioxide or photo-resist, and subsequent diffusions are performed through different unmasked portions of the elongated opening.

REFERENCES:
patent: 2981877 (1961-04-01), Noyce
patent: 3523042 (1970-08-01), Bower
patent: 3542551 (1970-11-01), Rice
patent: 3615929 (1971-10-01), Portnoy
patent: 3655457 (1972-04-01), Duffy
patent: 3833429 (1974-09-01), Monma

Affiliated with

Also associated with

Rating

Bipolar transistor construction method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bipolar transistor construction method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor construction method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1405219