Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-09-20
2005-09-20
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000
Reexamination Certificate
active
06946382
ABSTRACT:
A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers of a relatively non-porous, organic, polymeric, insulating dielectric material (hardmask) having a density less than 2.2 g/cm3; and (c) decomposing the sacrificial polymeric composition such that the decomposition products permeate at least partially through the one or more hardmask layers, thereby forming at least a partial air gap within the device.
REFERENCES:
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5461003 (1995-10-01), Havemann et al.
patent: 6165890 (2000-12-01), Kohl et al.
patent: 6350672 (2002-02-01), Sun
patent: 6451712 (2002-09-01), Dalton et al.
patent: 6495445 (2002-12-01), Clevenger et al.
patent: 6815329 (2004-11-01), Babich et al.
patent: 2004/0087133 (2004-05-01), Kumar
patent: 2004/041972 (2004-05-01), None
Kohl, et al., IEEE Electron Device Letters, vol. 21, No. 12, Dec. 2000, p557-559.
IBM Technical Disclosure Bulletin, vol. 38, No. 9 Sep. 1995, p137-140.
Foster Kenneth L.
Townsend, III Paul H.
Dow Global Technologies Inc.
Lebentritt Michael
Stevenson, Sr. Andre C.
LandOfFree
Process for making air gap containing semiconducting devices... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for making air gap containing semiconducting devices..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for making air gap containing semiconducting devices... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3395972