Process for making a semiconductor device having a TEOS based sp

Details Process for making a semiconductor device having a TEOS based sp Process for making a semiconductor device having a TEOS based sp

1992-10-23

1998-10-06

Dang, Trung

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438787, 438790, 438778, H01L 21469

Patent

active

058175822

ABSTRACT:
In on form, a TEOS based spin-on-glass is made having on the order of 10% to 25% by volume of tetraethylorthosilicate, the equivalent of on the order of 0.1% to 3.0% by volume of 70% concentrated nitric acid, on the order of 60% to 90% by volume of alcohol, and the balance water. The spin-on-glass is applied to a semiconductor substrate and heated in order to densify the spin-on-glass.

REFERENCES:
patent: 4619839 (1986-10-01), Lehrer
patent: 4654269 (1987-03-01), Lehrer
patent: 4771016 (1988-09-01), Bajor et al.
patent: 4798629 (1989-01-01), Wood et al.
patent: 4826709 (1989-05-01), Ryan et al.
patent: 4842901 (1989-06-01), Merrem et al.

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