Process for making a mask used in x-ray photolithography

Details Process for making a mask used in x-ray photolithography Process for making a mask used in x-ray photolithography

1986-05-23

1987-05-26

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 156655, 156656, 1566591, 20419232, 378 35, 430 5, 430317, 430318, B44C 122, C03C 1500, H01L 21306, C23F 102

Patent

active

046683364

ABSTRACT:
A method of manufacturing a mask for use in x-ray photolithography includes the steps of coating a set of wafers (20) with boron nitride (22). The tension in the boron nitride is measured by using a capacitive probe (26) to measure bowing in a set of test wafers. The remaining wafers are attached to a pyrex ring (28), and the boron nitride is removed from one side of the wafers. A circular hole is then etched in the wafer, and a layer of tantalum (32) and gold (34) are formed on the remaining boron nitride membrane. The gold (34) is patterned via a sputter etching process. Power is reduced at the end of the sputter etching process slowly to reduce mechanical stress in the mask. The tantalum (32) is then etched via a reactive ion etching process. In this way, an x-ray transparent boron nitride membrane is used to support x-ray opaque gold.

REFERENCES:
patent: 3743842 (1973-07-01), Smith et al.
patent: 3975252 (1976-08-01), Fraser et al.
patent: 4037111 (1977-07-01), Coquin et al.
patent: 4171489 (1979-10-01), Adams et al.
patent: 4515876 (1985-05-01), Yoshihara et al.

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