Process for making a CMOS image sensor

Details Process for making a CMOS image sensor Process for making a CMOS image sensor

2006-08-22

2006-08-22

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S290000, C257S291000, C257S293000, C438S048000

Reexamination Certificate

active

07095066

ABSTRACT:
An image sensor includes a semi-conducting substrate having a photo-sensitive region and doping for forming a path to a charge-to-voltage mechanism; a dielectric spanning the substrate; and a semi-conducting layer, which is less than approximately 1 micrometer, spanning the dielectric which contains electrodes and circuit elements that control flow of charge.

REFERENCES:
patent: 6040593 (2000-03-01), Park
patent: 6344368 (2002-02-01), Pan
patent: 6344669 (2002-02-01), Pan
patent: 6429036 (2002-08-01), Nixon et al.
patent: 6501065 (2002-12-01), Uppal et al.
patent: 6852591 (2005-02-01), Rhodes
patent: 2003/0025160 (2003-02-01), Suzuki et al.

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