Process for increasing sacrificial oxide etch rate to reduce fie

Details Process for increasing sacrificial oxide etch rate to reduce fie Process for increasing sacrificial oxide etch rate to reduce fie

1993-06-29

1995-01-31

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 156657, H01L 2100

Patent

active

053856309

ABSTRACT:
N.sub.2 implantation is used to increase the etch rate of a sacrificial oxide (sometimes referred to as the first gate oxide) in integrated circuitry. This implantation allows etching selectivity by changing the relative etch rates of materials. In the specific implementation described, a field oxide is also provided and this implantation increases the etch rate of the sacrificial oxide relative to that of the field oxide. No heat treatment is applied to the implanted material prior to etching having the ability to repair the damage caused by the bombardment.

REFERENCES:
patent: 4268347 (1981-05-01), Stephens
patent: 4530734 (1985-07-01), Klima
patent: 4978418 (1990-12-01), Arnold, Jr. et al.
patent: 4999083 (1991-03-01), Watanabe et al.
patent: 5135605 (1992-08-01), Blonder et al.

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