Process for improving critical dimension uniformity

Details Process for improving critical dimension uniformity Process for improving critical dimension uniformity

2005-01-25

2005-01-25

Duda, Kathleen (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S394000

Reexamination Certificate

active

06846618

ABSTRACT:
The present invention uses a double exposure and double etching method to improve critical dimension uniformity. A coating layer is formed on a wafer that includes a first area and a second area. The first area and the second area are separately patterned with different processing conditions. By means of this two-stage patterning, the CD uniformity between wafer center and wafer edge is successfully improved over the conventional single-stage patterning process. The fabrication yield is thus enhanced.

REFERENCES:
patent: 5691223 (1997-11-01), Pittikoun et al.
patent: 20030036005 (2003-02-01), Griesinger

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