Process for improved planarization of the passivation layers for

Details Process for improved planarization of the passivation layers for Process for improved planarization of the passivation layers for

1988-07-19

1991-01-22

Simmons, David

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 156663, 437 61, 437228, 437231, 427271, H01L 21306

Patent

active

049868780

ABSTRACT:
A method of manufacturing an integrated circuit having a multilayer structure where the method includes the steps of depositing a thin layer of low temperature oxide (LTO) on top of conductors and then spinning and curing a thin layer of spin-on-glass to planarize the surface of the device. This structure is then plasma etched to remove the spin-on-glass and a portion of the LTO at approximately the same rate. The structure is then dipped in a mild potassium hydroxide solution to completely remove the SOG material, even from the crevices and gaps which are present on the surface. This enables the device to be manufactured free of any organic substances from the SOG in the body of the structure. A passivation layer can now be deposited to protect the underlying circuitry from ionic contamination, water vapor penetration and handling.

REFERENCES:
patent: 4520041 (1985-05-01), Aoyama et al.
patent: 4539744 (1985-09-01), Burton
patent: 4545852 (1985-10-01), Barton
patent: 4614666 (1986-09-01), Lindenfelser
patent: 4628589 (1986-12-01), Sundaresan
patent: 4719125 (1988-01-01), Anello et al.
patent: 4721548 (1988-01-01), Morimoto
patent: 4775550 (1988-10-01), Chu et al.
patent: 4782030 (1988-11-01), Katsumata et al.
patent: 4783238 (1988-11-01), Roesner
patent: 4806504 (1989-02-01), Cleeves
patent: 4826786 (1989-05-01), Merenda et al.
patent: 4839311 (1989-06-01), Riley et al.
Adams et al., "Planarization of Phosphorus Doped Silicon Dioxide", J. Electrochem. Society, vol. 128, No. 2, 2/1981, pp. 423-429.

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