Process for improved doping of semiconductor crystals

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156607, 1566171, 1566261, 156DIG70, C30B 1504

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active

051867842

ABSTRACT:
Doping of IIIB-VB semiconductor crystals grown by the liquid encapsulated Cyochralski techniques is improved by introducing a metal to the crucible. The metal is characterized as having a lower melting temperature and a lower free energy of oxide formation than the dopant element.

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