Process for improved doping of semiconductor crystals

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156607, 1566171, 1566202, 156DIG72, C30B 1504

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active

052599167

ABSTRACT:
Doping of IIIB-VB semiconductor crystals grown by the liquid encapsulated Czochralski techniques is improved by introducing a metal to the crucible. The metal is characterized as having a lower melting temperature and a lower free energy of oxide formation than the dopant element.

REFERENCES:
patent: 3533967 (1970-10-01), McNelly et al.
patent: 4973454 (1990-11-01), Morioka et al.
Kazmierski et al, "The Kinetics of Si Incorporating in Ga Melt for LPE Growth of GaP . . . ", Journal of Crystal Growth vol. 60 (1982) pp. 434-440.

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