Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-04-28
1993-11-09
Kunemund, Robert
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156607, 1566171, 1566202, 156DIG72, C30B 1504
Patent
active
052599167
ABSTRACT:
Doping of IIIB-VB semiconductor crystals grown by the liquid encapsulated Czochralski techniques is improved by introducing a metal to the crucible. The metal is characterized as having a lower melting temperature and a lower free energy of oxide formation than the dopant element.
REFERENCES:
patent: 3533967 (1970-10-01), McNelly et al.
patent: 4973454 (1990-11-01), Morioka et al.
Kazmierski et al, "The Kinetics of Si Incorporating in Ga Melt for LPE Growth of GaP . . . ", Journal of Crystal Growth vol. 60 (1982) pp. 434-440.
Kurz Jimmy D.
Rau Mann-Fu
Wang Faa-Ching M.
Donaldson Richard L.
Grossman Rene E.
Kunemund Robert
Texas Instruments Incorporated
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