Process for high voltage superjunction termination

Details Process for high voltage superjunction termination Process for high voltage superjunction termination

2008-04-16

2009-11-24

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

With electric field controlling semiconductor layer having a...

C257SE29007, C257SE21546, C438S427000

Reexamination Certificate

active

07622787

ABSTRACT:
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.

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