Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-04-25
1995-05-09
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257322, 257324, 257328, 257330, 257331, 437 42, 437 43, 437228, H01L 2968, H01L 21265
Patent
active
054142873
ABSTRACT:
A method and structure for manufacturing a high-density split gate memory cell, for a flash memory or EPROM, is described. Silicon islands are formed from a silicon substrate implanted with a first conductivity-imparting dopant. A first dielectric layer surrounds the vertical surfaces of the silicon islands, whereby the first dielectric layer is a gate oxide. A first conductive layer is formed over a portion of the vertical surfaces of the first dielectric layer, and acts as a floating gate for the high density split-gate memory cell. A source region is located in the silicon substrate, and is implanted with a second and opposite conductivity-imparting dopant to the first conductivity-imparting dopant, and surrounds the base of the silicon islands. A drain region is located in the top of the silicon islands, and is also implanted with a second and opposite conductivity-imparting dopant to the first conductivity-imparting dopant. A second dielectric layer is formed over the top and side surfaces of the floating gate, and acts as an interpoly dielectric. A second conductive layer is formed over that remaining portion of the vertical surfaces of the first dielectric layer not covered by the first conductive layer, and surrounds the second dielectric layer, whereby the second conductive layer is a control gate.
REFERENCES:
patent: 4868629 (1989-09-01), Eitan
patent: 5017977 (1991-05-01), Richardson
patent: 5063172 (1991-11-01), Manley
patent: 5115288 (1992-05-01), Manley
"High Performance CMOS Surrounding Gate Transistor (SGT) for Ultra High Density LSIS", by H. Takato et al., IEDM 88, pp. 222-224, Jan. 1988.
Saile George O.
United Microelectronics Corporation
Wojciechowicz Edward
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