Process for growing semiconductor layer on substrate

Details Process for growing semiconductor layer on substrate Process for growing semiconductor layer on substrate

1991-11-22

1993-10-12

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, 156614, 156DIG73, 156603, 437132, 437133, C30B 2510

Patent

active

052521737

ABSTRACT:
A monocrystalline layer of a III-V type or II-VI type compound semiconductor is epitaxially grown on a silicon substrate, and then subjected to a plurality of reheating steps during the cooling stage, wherein at least one of the upper limit temperatures of the reheating steps is lower than that used in the growing stage. The etch pit density is reduced to less than 10.sup.6 cm.sup.-2.

REFERENCES:
patent: 3729348 (1973-04-01), Saul
patent: 4863877 (1989-09-01), Fan et al.
patent: 5011794 (1991-04-01), Grim et al.
patent: 5061642 (1991-10-01), Fujioka et al.
Shimizu et al., "Dislocation Density Studies in MOCVD GaAs on Si Substrates", Journal of Crystal Growth, vol. 93 (1988), pp. 475-480.
Appl. Phy. Lett. 56 (22) 2225-2227 (1990), May 28, Tachikawa et al., "Dislocation Generation of GaAs on Si in the Cooling Stage".

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