Process for growing crystal

Details Process for growing crystal Process for growing crystal

1990-06-26

1993-08-17

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG73, 437 24, 437 83, 437247, 437946, 148DIG7, C30B 2504

Patent

active

052365441

ABSTRACT:
A process of growing a monocrystal on an insulating film provided on a metal electrode, which comprises: providing a semiconductor film on a substrate having a metal electrode and an insulating film; causing the semiconductor film and the insulating film to undergo the solid phase reaction at the interface therebetween; forming a monocrystalline cohering body of the semiconductor film at the opening of the insulating film by applying annealing for cohesion of the semiconductor film on the metal electrode; and allowing a monocrystal to grow with the monocrystalline cohering body as a seed.

REFERENCES:
patent: 4444615 (1984-04-01), Matzuzawa et al.
patent: 4755487 (1988-07-01), Scovell et al.
patent: 4773964 (1988-09-01), Haond
patent: 4855014 (1989-08-01), Kakimoto et al.

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