Process for growing a film epitaxially upon an oxide surface and

Details Process for growing a film epitaxially upon an oxide surface and Process for growing a film epitaxially upon an oxide surface and

1993-12-08

1995-09-19

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117104, 4272481, 437105, C30B 2302

Patent

active

054508126

ABSTRACT:
A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

REFERENCES:
patent: 3655429 (1972-04-01), Deklerk
patent: 4996187 (1991-02-01), Chai
patent: 5323024 (1994-06-01), Adams

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