Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-06-01
2011-11-22
Landau, Matthew (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE33023, C257SE29089, C977S773000, C977S815000, C977S816000, C977S818000, C977S819000
Reexamination Certificate
active
08062967
ABSTRACT:
Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
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Buretea Mihai A.
Freeman William P.
Gamoras Joel
Qian Baixin
Scher Erik C.
Filler Andrew L.
Landau Matthew
Nanosys Inc.
Snow Colleen E
LandOfFree
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