Process for forming transparent silicon carbide films

Details Process for forming transparent silicon carbide films Process for forming transparent silicon carbide films

1992-06-12

1993-03-02

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419214, 20419216, 20419223, C23C 1434

Patent

active

051906317

ABSTRACT:
A process for forming a transparent silicon carbide film on substrates by magnetron sputtering a silicon carbide target in a partial vacuum having a partial pressure of hydrogen and argon.

REFERENCES:
patent: 4209375 (1980-06-01), Gates et al.
patent: 4359372 (1982-11-01), Nagai et al.
patent: 4411963 (1983-10-01), Aine
patent: 4661420 (1987-04-01), Nakamura et al.
patent: 4737252 (1988-04-01), Hoffman
patent: 4759836 (1988-07-01), Hill et al.
patent: 4917970 (1990-04-01), Funkunbusch
patent: 4936959 (1990-06-01), Schmatz et al.
patent: 4971673 (1990-11-01), Weisweiler et al.

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