Process for forming titanium silicide local interconnect

Details Process for forming titanium silicide local interconnect Process for forming titanium silicide local interconnect

1990-05-14

1995-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437195, H01L 21768, H01L 2144

Patent

active

054439965

ABSTRACT:
A process for forming a titanium silicide local interconnect between electrodes separated by a dielectric insulator on an integrated circuit. A first layer of titanium is formed on the insulator, and a layer of silicon is formed on the titanium. The silicon layer is masked and etched to form a silicon strip connecting the electrodes, and an overlying second layer of titanium is formed over the silicon strip. The titanium and silicon are heated to form nonsilicidized titanium over a strip of titanium silicide, and the nonsilicidized titanium is removed.

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