Process for forming silicon oxide material

Details Process for forming silicon oxide material Process for forming silicon oxide material

2005-06-14

2005-06-14

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S438000, C438S702000, C438S763000

Reexamination Certificate

active

06905939

ABSTRACT:
A thin layer of silicon oxide is formed by cyclic introduction of a silicon-containing precursor gas and an oxidizing gas separated by an intervening purge step. The resulting thin oxide layer enables subsequent conventional CVD of oxide to produce a more uniform deposited oxide layer over nonhomogenous surfaces, for example the silicon nitride mask/thermal oxide liner surfaces created during fabrication of shallow trench isolation structures.

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