Process for forming silicon dioxide film

Details Process for forming silicon dioxide film Process for forming silicon dioxide film

1997-06-30

1998-06-23

King, Roy V.

Coating processes

Heat decomposition of applied coating or base material

427539, 427557, 427558, 4273977, 438789, 438790, B05D 302, B05D 306

Patent

active

057702608

ABSTRACT:
A process capable of forming an inorganic film which can be used at a relatively large thickness equivalent to, or greater than, the thickness of an organic SOG, without being subjected to oxidation by O.sub.2 plasma treatment used in a fabrication process of a semiconductor device. Polysilazane is first coated on a base, and the resulting polysilazane film is converted to a silicon dioxide film.

REFERENCES:
patent: 4116658 (1978-09-01), Sano

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