Process for forming shallow trench isolation

Details Process for forming shallow trench isolation Process for forming shallow trench isolation

1996-09-06

1998-05-05

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438702, 438947, H01L 2176

Patent

active

057473773

ABSTRACT:
A process for forming a shallow trench isolation is disclosed. Initially, a gate oxide layer is formed on a substrate, and a silicon nitride, which defines an active area, is then patterned on the gate oxide layer. Next, hemispherical grain silicon is formed on the silicon nitride, the sidewalls of the silicon nitride, and the exposed gate oxide layer. Portions of the gate oxide layer are removed to form oxide islands using the silicon nitride and the hemispherical grain silicon as mask. Thereafter, portions of the substrate are removed using the oxide islands as mask. Finally, the exposed substrate is thermally oxidized to form the field oxide structure of the present invention.

REFERENCES:
patent: 5308786 (1994-05-01), Lur et al.
patent: 5374583 (1994-12-01), Lur et al.
patent: 5393373 (1995-02-01), Jun et al.
patent: 5395790 (1995-03-01), Lur

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