Process for forming semiconductor device having multi-thickness

Details Process for forming semiconductor device having multi-thickness Process for forming semiconductor device having multi-thickness

1985-09-06

1988-01-12

Bashore, S. Leon

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 1566591, 1566611, 156665, 430318, 437228, H01L 2128, H01L 2944, C23F 102

Patent

active

047189770

ABSTRACT:
Structure and method for metallization patterns of different thicknesses on a semiconductor device or integrated circuit. The improved structure and method utilizes three layers of metal in order to reduce the required number of processing steps. One preferred embodiment entails a single metal deposition sequence followed by two etch steps, while a second embodiment, suitable for thicker metallization, requires only two depositions and two etch steps.

REFERENCES:
patent: 3562604 (1971-02-01), Van Laer
patent: 3700510 (1972-10-01), Keene et al.
patent: 4000842 (1977-01-01), Burns
patent: 4233337 (1980-11-01), Friedman et al.
patent: 4495026 (1985-01-01), Herberg
patent: 4536951 (1985-08-01), Rhodes et al.
patent: 4556897 (1985-12-01), Yorikane et al.

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