Process for forming retrograde dopant distributions utilizing si

Details Process for forming retrograde dopant distributions utilizing si Process for forming retrograde dopant distributions utilizing si

1984-12-03

1986-03-25

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29576B, 29576W, 148187, 148175, 156643, 357 42, 357 50, H01L 2120, H01L 21225

Patent

active

045781281

ABSTRACT:
A retrograde dopant distribution is provided in a semiconductor substrate by the combined use of indiffusion and surface outdiffusion and without the use of high energy implants or buried epitaxial layers. The retrograde dopant distribution is provided both in the n-well and the p-well regions to a depth sufficient to accommodate deep trench isolation structures.

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Chen, "Quadruple-Well CMOS for VLSI Technology", IEEE Transactions on Electron Devices, vol. ED-31, No. 7, Jul. 1984, pp. 910-919.
Manoliu et al., "High-Density and Reduced Latchup Susceptibility CMOS Technology for VLIS", IEEE Electron Device Letters, vol. EDL-4, No. 7, Jul. 1983, pp. 233-235.

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