Process for forming polycrystalline silicon layer by laser...

Details Process for forming polycrystalline silicon layer by laser... Process for forming polycrystalline silicon layer by laser...

2006-10-31

2006-10-31

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

Reexamination Certificate

active

07129153

ABSTRACT:
A process for forming a polycrystalline silicon layer includes the following steps. Firstly, at least one seed is formed on a substrate. Then, an amorphous silicon layer is formed on the substrate and overlies the seed. Then, the amorphous silicon layer is irradiated with a laser to melt the amorphous silicon layer. Afterward, the molten amorphous silicon layer is recrystallized to form a polycrystalline silicon layer.

REFERENCES:
patent: 4799097 (1989-01-01), Szluk et al.
patent: 5766989 (1998-06-01), Maegawa et al.
patent: 5858820 (1999-01-01), Jung et al.
patent: 5893948 (1999-04-01), Nickel et al.
patent: 5972105 (1999-10-01), Yamazaki et al.
patent: 6187088 (2001-02-01), Okumura
patent: 6489222 (2002-12-01), Yoshimoto
patent: 6656270 (2003-12-01), Chung
patent: 08-316485 (1996-11-01), None

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