Process for forming opening having tapered sides in a plasma nit

Details Process for forming opening having tapered sides in a plasma nit Process for forming opening having tapered sides in a plasma nit

1981-02-23

1982-08-03

Kimlin, Edward C.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156628, 156653, 156657, 156662, 430317, 427 94, 427 38, B44C 122, C03C 1500, H01L 21306

Patent

active

043426174

ABSTRACT:
A process is described for forming a plasma nitride (SiNy) layer and a tapered opening through the layer so that the opening may more readily receive ohmic contacts. During the formation of the plasma nitride layer, more silane (over ammonia) is used to form a silicon rich upper portion of the layer. During the subsequent etching of this layer to form the opening, the silicon rich portion of the plasma nitride layer etches more quickly than the remainder of the layer and this results in the formation of the tapered opening through the layer.

REFERENCES:
patent: 3549411 (1970-12-01), Bean et al.
patent: 3842490 (1974-10-01), Seales
patent: 4181564 (1980-01-01), Fogarty et al.
patent: 4239587 (1980-12-01), Koel et al.

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