Process for forming metal silicide contacts using amorphization

Details Process for forming metal silicide contacts using amorphization Process for forming metal silicide contacts using amorphization

1997-01-23

2000-01-04

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438510, 438514, H01L 2910

Patent

active

060109521

ABSTRACT:
An improved process is provided for amorphizing portions of a silicon substrate and a polysilicon gate electrode surface to be converted to metal silicide by subsequent reaction of the amorphized silicon with a metal layer applied over the silicon substrate and polysilicon gate electrode after the amorphizing step. The improvement comprises implanting the exposed surface of the silicon substrate and the surface of the polysilicon gate electrode with a beam of amorphizing ions at an angle of at least 15.degree. to a line perpendicular to the plane of the surface of the silicon substrate to thereby inhibit channeling of the implanted ions through the gate electrode to the underlying gate oxide and channel of the MOS structure. The implant angle of the beam of amorphizing ions is preferably at least 30.degree., but should not exceed 60.degree., with respect to a line perpendicular to the plane of the surface of the silicon substrate.

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patent: 4816893 (1989-03-01), Mayer et al.
patent: 5218221 (1993-06-01), Okumura
patent: 5789802 (1998-08-01), Tripsas
Jorge A. Kittl, Qi-Zhong Hong, Mark Rodder, Douglas A. Prinslow and George R. Misium, "A Ti Salicide Process for 0.10 micron Gate Length CMOS Technology" Sympossium on VLSI Technology Digest of Technical Paper, 1996.
Horiuchi, T. , et al. , "A New Titanium Salicide Process (DIET) for Subquarter Micron CMOS", 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 121-122.

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