Process for forming metal films by plasma sputtering

Details Process for forming metal films by plasma sputtering Process for forming metal films by plasma sputtering

1993-11-05

1995-07-11

King, Roy V.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419226, 20419227, 20429804, 20429826, C23C 1434

Patent

active

054317940

ABSTRACT:
A metal film high in reflectivity and excellent in adhesion to a synthetic resin substrate even in the case where the metal film is sufficiently thin, is formed on a surface of the substrate by sputtering a metal target by ions through an inert gas plasma in a vacuum vessel, wherein the substrate is covered with an electrostatic shield during the sputtering.

REFERENCES:
patent: 4426275 (1984-01-01), Meckel et al.
patent: 4784739 (1988-11-01), Kadokura et al.
patent: 5000834 (1991-03-01), Yoshikawa
patent: 5064520 (1991-11-01), Miyake et al.
patent: 5074984 (1991-12-01), Sichmann et al.
Weissmantel, "Ion beam deposition of special film structures", J. Vac. Sci. Tech. 18(2) Mar. 1981, pp. 179-185.
Y. Suzuki et al., "Preparation of CoCr thin films on polymer substrates by ion beam sputtering", J. Vac. Sci. Technol. 5(4), Jul/Aug. 1987, pp. 1870-1873.

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