Process for forming low resistivity titanium nitride films

Details Process for forming low resistivity titanium nitride films Process for forming low resistivity titanium nitride films

1991-08-16

1994-01-18

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

4272551, 427337, 427343, C23C 1634, C23C 1646, B05D 304

Patent

active

052798577

ABSTRACT:
A process for forming low resistivity titanium nitride films on a silicon substrate by chemical vapor deposition includes a post-deposition ammonia anneal to provide hydrogen atoms which chemically react with chlorine atoms entrained within the titanium nitride film. The titanium nitride film is deposited by placing the silicon substrate in a reaction chamber, heating the silicon substrate within the reaction chamber, initially passing both TiCl.sub.4 gas and NH.sub.3 gas into the reaction chamber over the silicon substrate to deposit titanium nitride upon a surface of the silicon substrate, and thereafter discontinuing the flow of TiCl.sub.4 gas while continuing to pass NH.sub.3 gas into the reaction chamber over the silicon substrate to react with and remove residual chlorine atoms retained by the deposited titanium nitride film.

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