Process for forming low k silicon oxide dielectric material whil

Details Process for forming low k silicon oxide dielectric material whil Process for forming low k silicon oxide dielectric material whil

1999-11-12

2000-11-14

Niebling, John F.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438466, 438789, 438790, H01L 2131

Patent

active

061470120

ABSTRACT:
A process for forming low k silicon oxide dielectric material having a dielectric constant no greater than 3.0, while suppressing pressure spikes during the formation of the low k silicon oxide dielectric material comprises reacting an organo-silane and hydrogen peroxide in a reactor chamber containing a silicon substrate while maintaining an electrical bias on the substrate. In a preferred embodiment the reactants are flowed into the reactor at a reactant flow ratio of organo-silane reactant to hydrogen peroxide reactant of not more than 10.6 sccm of organo-silane reactant per 0.1 grams/minute of hydrogen peroxide reactant; and the substrate is biased with either a positive DC bias potential, with respect to the grounded reactor chamber walls, of about +50 to +300 volts, or a low frequency AC bias potential ranging from a minimum of +50/-50 volts up to a maximum of about +300/-300 volts.

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