Process for forming low dielectric constant layers using fullere

Details Process for forming low dielectric constant layers using fullere Process for forming low dielectric constant layers using fullere

1995-11-13

1998-04-28

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438778, 438787, 438790, 438784, H01L 21316

Patent

active

057443998

ABSTRACT:
A process for lowering the dielectric constant of a layer on a semiconductor wafer is described. The presence of the fullerene in the composite layer changes its dielectric constant. The process forms, on the wafer, a composite layer comprising matrix-forming material and a fullerene. The fullerene may be removed from the composite layer to leave an open porous layer. Removing the fullerene may be accomplished, for example, by contacting the composite layer with a liquid which is a solvent for the fullerene but not for the insulation material or by oxidizing the fullerene. The processes and insulation layers described are particularly useful for integrated circuits.

REFERENCES:
patent: 5294600 (1994-03-01), Tanigaki
patent: 5300203 (1994-04-01), Smalley
patent: 5310532 (1994-05-01), Tour et al.
patent: 5324495 (1994-06-01), Gorun
patent: 5348936 (1994-09-01), McCauley et al.
patent: 5364993 (1994-11-01), Zhang et al.
patent: 5386048 (1995-01-01), West et al.
patent: 5389908 (1995-02-01), Sawada
patent: 5393712 (1995-02-01), Rostoker et al.
patent: 5395496 (1995-03-01), Tsantrizos et al.
patent: 5401975 (1995-03-01), Ihara et al.
patent: 5420081 (1995-05-01), Mattes et al.
Kroto et al., "C60: Buckminsterfullerene," Chemical Reviews, vol. 91, No. 6, 1991, pp. 1213-1235.
Edward Edelson, "Buckyball-The Magic Molecule", Popular Science, vol. 239, No. 2, Aug. 1991, pp. 52-57.
Ross, Billions of Buckytubes; Mass Production of Carbon Cylinders Sparks Interest, Scientific America, vol. 267, No. 4, Oct. 1992, pp. 115-117.
Zybill, "Si60, An Analogue of C60?", Angew. Chem. Int. Ed. Engl., vol. 31, No. 2, 1992, pp. 173-175.
Piqueras et al., "VEH Electronic Structure of Si60," Synthetic Metals, vol. 61, 1993, pp. 155-158.
Kobayashi et al., "A Theoretical Study of the Stability of the Fullerene-Like Cage Structures of Silicon CLusters," Bull. Chem. Soc. Jpn., vol. 66, No. 11, 1993, pp. 3334-3338.

Affiliated with

Also associated with

Rating

Process for forming low dielectric constant layers using fullere does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming low dielectric constant layers using fullere, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming low dielectric constant layers using fullere will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1531573