Process for forming hydrogenated amorphous silicon film

Details Process for forming hydrogenated amorphous silicon film Process for forming hydrogenated amorphous silicon film

1996-05-08

1998-03-03

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 20419226, C23C 1434

Patent

active

057230340

ABSTRACT:
A process for forming an hydrogenated amorphous silicon film by depositing an hydrogenated amorphous silicon hydride film onto a substrate by a high frequency sputtering comprises applying a DC or high frequency, bias voltage to at least one of a target composed of a material containing Si atom and a substrate with a discharge frequency of 50 MHz or more and using an inert gas containing hydrogen in a controlled amount of 0.1 atomic % or more as an electric discharge gas.

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patent: 4824546 (1989-04-01), Ohmi
patent: 4874494 (1989-10-01), Ohmi
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J. Vacuum Sci. Techn., 14, 92 (1972).
W.T. Pawlewicz, "Influence of Deposition Conditions on sputter-Deposited Amorphous Silicon", J. Appl. Phys., vol. 49, No. 11, Nov. 1978, pp. 5595-5601.
T. Ohmi et al., "Formation of Device-grade epitaxial silicon films at extremely low temperatures by low-energy bias sputtering", J. Appl. Phys. 66 (10), pp. 4526-4766 (1989).

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