Process for forming highly conformal dielectric coatings in the

Details Process for forming highly conformal dielectric coatings in the Process for forming highly conformal dielectric coatings in the

1990-10-09

1991-08-13

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427 39, 4272552, 4272553, 428447, 437238, 437241, C23C 1650

Patent

active

050400460

ABSTRACT:
A process for forming silicon dioxide, SiO.sub.2, or silicon nitride, Si.sub.3 N.sub.4, layers on selected substrates which includes reacting diethylsilane, C.sub.4 H.sub.12 Si, with a selected oxygen-containing compound or nitrogen-containing compound in a plasma enhanced chemical vapor deposition (PECVD) chamber. The conformality of the coatings thus formed is in the range of 85% to 98%. The diethylsilane liquid source for the associated gas flow processing system may be maintained and operated at a source temperature as low as room temperature.

REFERENCES:
patent: 4396641 (1983-08-01), Imoda et al.
patent: 4981724 (1991-01-01), Hochberg et al.

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