Process for forming high-quality deposited film utilizing plasma

Details Process for forming high-quality deposited film utilizing plasma Process for forming high-quality deposited film utilizing plasma

1996-04-03

1998-12-08

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427570, 427573, 427574, 427578, 430128, B05D 306, H05H 100

Patent

active

058466126

ABSTRACT:
Provided is a process for efficiently forming a high-quality deposited film at a high deposition rate in the quality equivalent to or higher than that of films formed by the RF plasma CVD process. A stock gas is introduced under a reduced pressure into a reaction container provided with a cathode electrode inside and a high-frequency power in the range of 50 to 300 MHz is supplied to the cathode electrode, whereby ions of the stock gas with energy of 40 or more eV are made to hit against a substrate, thereby forming a deposited film thereon.

REFERENCES:
patent: 4619729 (1986-10-01), Johncock et al.
patent: 5300460 (1994-04-01), Collins et al.
patent: 5534070 (1996-07-01), Okamura et al.
patent: 5540781 (1996-07-01), Yamagami et al.
H. Curtins et al., "Influence of Plasma Excitation Frequency for a-Si:H Thin Film Deposition", Plasma Chem. and Plasma Proc. vol. 7, No. 3 (1987). pp. 267-273.

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