Process for forming high purity thin films

Details Process for forming high purity thin films Process for forming high purity thin films

1989-12-04

1991-01-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 18, 437225, 437228, 437235, 437 38, 437 39, 118 501, 118620, H01L 2100, H01L 2102, H01L 21265, C23C 1434

Patent

active

049871021

ABSTRACT:
A method is described for the formation of high purity thin films on a semiconductor substrate. In the preferred embodiment of the invention a thin film is formed on a semiconductor substrate in a plasma enhanced chemical vapor deposition system. Energized silicon ions are obtained by mass analysis and are accelerated into a hydrogen-free plasma. A reaction occurs between energized atoms within the plasma and the energized silicon ions resulting in the deposition of a thin film on the semiconductor substrate.

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