Process for forming hafnium oxide films

Details Process for forming hafnium oxide films Process for forming hafnium oxide films

2001-11-14

2004-01-27

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S591000, C257SE21639

Reexamination Certificate

active

06683011

ABSTRACT:

TECHNICAL FIELD
This invention relates to forming a hafnium oxide film on a substrate by chemical vapor deposition.
BACKGROUND
A number of materials have been proposed as replacements for silicon dioxide as the gate dielectric in metal oxide semiconductor field effect transistors (MOSFETs). Examples include oxides of titanium, zirconium, and hafnium. These materials have higher dielectric constants than silicon dioxide, making it possible to achieve an equivalent capacitance using a thicker layer. The thicker layer, in turn, reduces leakage current.
SUMMARY
In general, the invention features a process for forming a hafnium oxide-containing film on a substrate such as silicon that includes introducing an anhydrous hafnium nitrate-containing precursor into a reactor containing the substrate, and converting the precursor into the hafnium oxide-containing film on the substrate by chemical vapor deposition. The precursor may be introduced into the reactor in the form of a gas or a liquid. It may be used alone or in combination with a carrier gas such as nitrogen. The hafnium nitrate may be used as a single source precursor or in the presence of an additional oxygen source such as oxygen (O
2
), ozone (O
3
), water (H
2
O) or hydrogen peroxide (H
2
O
2
).
Using a hafnium nitrate-containing precursor eliminates the need for a separate oxidizing agent such as oxygen. In addition, because the precursor is free of carbon, hydrogen, and halogen atoms, impurities in the final film are minimized.
The details of one or more embodiments of the invention are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the invention will be apparent from the description and drawings, and from the claims.


REFERENCES:
patent: 6203613 (2001-03-01), Gates et al.
Smith et al., “Chemical Vapour Deposition of the Oxides of Titanium, Zirconium and Hafnium for Use as High-K Materials in Microelectronic Devices . . . ”, Jun. 2000, Advanced Materials for Opticsand Electronics InterScience: Journal Subsciption and Available Issue online information (citation), http://www3.interscience.wiley.com.*
Smith et al., “Chemical Vapour Deposition of the Oxides of Titanium, Zirconium and Hafnium for Use as High-K Materials in Microelectronic Devices . . . ”, Jun. 2000, Advanced Materials for Opticsand Electronics 10, pp105-114.*
Colombo et al., “Anhydrous Metal Nitrates as Volatile Single Source Precursors for the CVD of Metal Oxide Films,”Chem. Vap. Deposition, 1998, 4(6):220-222.
Gilmer et al., “Low Temperature CVD of Crystalline Titanium Dioxide Films Using Tetranitratotitanium(IV),”Chem. Vap. Deposition, 1998, 4(1): 9-11.
Taylor et al., “Does Chemistry Really Matter in the Chemical Vapor Deposition of Titanium Dioxide? Precursor and Kinetic Effects on the Microstructure of Polycrystalline Films,”J. Am. Chem. Soc., 1999, 121:5220-5229.

Affiliated with

Also associated with

Rating

Process for forming hafnium oxide films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming hafnium oxide films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming hafnium oxide films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3195281