Process for forming grooves having different depths using a sing

Details Process for forming grooves having different depths using a sing Process for forming grooves having different depths using a sing

1984-04-06

1985-01-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576W, 29580, 148187, 156651, 156653, 156657, 1566611, 357 49, 427 93, 430313, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044950250

ABSTRACT:
A process for forming grooves of different depths using a single masking step is presented. In the preferred embodiment of the present invention a photoresist material is used as a single masking layer. The grooves of different types are defined in the masking layer such that the image for a first type groove is narrower in width than the image for a second type groove. The grooves are then formed by subsequent etching steps using conventional etching and anisotropic etching techniques. The grooves are etched to different depths by calculating the proper thickness of a protective layer in relationship to the different groove widths which will allow the deeper groove to be etched without affecting the shallower groove.

REFERENCES:
patent: 4445967 (1984-05-01), Kameyama
T. Yamaguchi, et al., "High-Speed Latchup Free 0.5-um-Channel CMOS Using Self Aligned TiSi.sub.2 and Deep-Trench Isolation Technologies, " Proceedings IEDM 1983, pp. 522-525.
D.N.K. Wang et al., "Reactive Ion-Etching Eases Restrictions on Materials and Feature Sizes", Electronics, Nov. 3, 1983, pp. 157-161.

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