Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-02-18
2000-04-11
Crane, Sara
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438623, 438725, 438778, 438780, H01L 214763
Patent
active
060487860
ABSTRACT:
A resin or amorphous carbon layer is coated on a substrate and then fluorinated by exposing it in a F.sub.2 gas atmosphere. The thus fluorinated resin or amorphous carbon layer can be excellent in dielectric constant and thermal resistance. The resin may be photo-sensitive so that the resin can be patterned before the fluorination. Alternatively, the resin can be fluorinated before patterning.
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Crane Sara
Fujitsu Limited
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